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NGTB60N65FL2WG

NGTB60N65FL2WG

Trans IGBT Chip N-CH 650V 100A 595mW 3-Pin(3+Tab) TO-247 Tube

  • Part Number: NGTB60N65FL2WG
  • Brands: Onsemi
  • Category: IGBTs

Details

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Feature

  • Extremely Efficient Trench with Field Stop Technology
  • Tjmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short-Circuit Capability
  • These are Pb-Free Devices

Application

  • Half bridge inverter
  • T-Type inverter
  • I-Type inverter

Parameters

Compliant EAR99
Obsolete 8541.29.00.95
No No
Field Stop|Trench N
Single ±20
650 1.64
100 0.2
595 -55
175 Tube
Through Hole 21.34(Max)
5.3(Max) 16.26(Max)
3 Tab
TO-247 TO-247
3 Through Hole

IGBT Module FAQ

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  • How are IGBT modules used in industrial applications?

    IGBT modules are designed and manufactured with a wide range of blocking voltages, current capacities, circuit configuration sizes and isolation voltages. IGBT modules are designed to provide high reliability and are customized to meet the individual needs of end-use applications, including aerospace, automotive, medical, renewable energy and industrial traction markets.