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NGTB15N120FLWG

NGTB15N120FLWG

Trans IGBT Chip N-CH 1200V 30A 156mW 3-Pin(3+Tab) TO-247 Tube

  • Part Number: NGTB15N120FLWG
  • Brands: Onsemi
  • Category: IGBTs

Details

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.

Feature

  • Low Saturation Voltage using Trench with Field Stop Technology
  • Low Switching Loss
  • 10 µs Short Circuit Capability
  • Soft, Fast Free Wheeling Diode

Application

  • Power Conversion

Parameters

Compliant EAR99
Obsolete 8541.29.00.95
No No
N Single
±20 1200
2 30
0.1 156
-55 150
Tube Through Hole
21.08(Max) 5.3(Max)
16.26(Max) 3
Tab TO-247
TO-247 3
Through Hole

IGBT Module FAQ

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  • How are IGBT modules used in industrial applications?

    IGBT modules are designed and manufactured with a wide range of blocking voltages, current capacities, circuit configuration sizes and isolation voltages. IGBT modules are designed to provide high reliability and are customized to meet the individual needs of end-use applications, including aerospace, automotive, medical, renewable energy and industrial traction markets.