IKW60N60H3FKSA1
IGBT Trench Field Stop 600 V 80 A 416 W Through Hole PG-TO247-3
- Part Number: IKW60N60H3FKSA1
- Brands: Infineon
- Category: IGBTs
The IKW60N60H3FKSA1 is a top-of-the-line N-channel enhancement mode power MOSFET transistor that offers exceptional performance and reliability for a variety of high-power applications. With a voltage rating of 600V and a continuous drain current of 60A, this transistor is well-suited for demanding power electronics tasks. Its ultra-low on-state resistance of 0.13 ohms contributes to high efficiency and minimal power dissipation, making it an ideal choice for energy-conscious designs. The use of advanced superjunction technology sets the IKW60N60H3FKSA1 apart from traditional MOSFETs, resulting in improved thermal performance, reduced switching losses, and enhanced reliability in high-power scenarios. The TO-247 package provides excellent thermal conductivity and mechanical strength for easy and secure installation, while integrated ESD protection ensures robustness in harsh operating conditions
INFINEON TECHNOLOGIES | IGBT | ||
TRENCHSTOP™ | 600V | ||
60A | 416W | ||
TO247-3 | ±20V | ||
180A | THT | ||
375nC | tube | ||
H3 | 64ns | ||
314ns | single transistor | ||
integrated anti-parallel diode |