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FZ825R33HE4D

FZ825R33HE4D

IHV-B 3300 V, 3300 V, 825 A 130 mm single switch IGBT Module with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. The experienced solution for traction and industry applications.

  • Part Number: FZ825R33HE4D
  • Brands: Infineon
  • Category: IGBT Modules

Feature

  • High DC stability
  • Best in class short circuit capability
  • Low switching losses
  • Tvj op = 150°C
  • VCEsat with positive temperature coefficient
  • AlSiC base plate for increased thermal cycling capability
  • Package with CTI > 600
  • Isolated base plate
  • Diode Power 30% higher than IGBT
  • Unbeatable robustness
  • Standardized housing
  • 2 times higher Power Cycling Capability than Infineon IGBT3 and any competition 3.3 kV IHV
  • Easy replacement of FZ1000R33HE3 and FZ800R33KF2C and as well any competition 800 to 1000 A 3.3 kV devices possible on high performance and housing compatibility
  • Bigger Diode enables e.g. increased braking Power at traction applications

Parameters

Single switch IHM B
825.0 A Traction
IGBT4 - E4 3300.0 V
Enlarged Diode

IGBT Module FAQ

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  • What should I do if I do not receive the technical support for FZ825R33HE4D in time?

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  • How are IGBT modules used in industrial applications?

    IGBT modules are designed and manufactured with a wide range of blocking voltages, current capacities, circuit configuration sizes and isolation voltages. IGBT modules are designed to provide high reliability and are customized to meet the individual needs of end-use applications, including aerospace, automotive, medical, renewable energy and industrial traction markets.