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FS03MR12A6MA1LB

FS03MR12A6MA1LB

Mosfet Array 1200V (1.2kV) 400A Chassis Mount AG-HYBRIDD-2

  • Part Number: FS03MR12A6MA1LB
  • Brands: Infineon
  • Category: IGBT Modules

Details

This transistor is built to deliver reliable and efficient power conversion in a compact package. The use of silicon carbide technology ensures improved thermal performance and reduced switching losses, making it an ideal choice for high-frequency power electronics applications

Feature

  • New semiconductor material - Silicon Carbide
  • Blocking voltage 1200V
  • Low RDSon
  • Low Switching Losses
  • Low Og and Crss
  • Low Inductive Design <10nH
  • T vj op= 150°C
  • Compact Design
  • Direct Cooled Base Plate
  • Guiding elements for PCB and cooler assembly
  • Integrated NTC temperature sensor
  • PressFIT Contact Technology
  • RoHS complient
  • Superior reliability
  • Long tabs for current sense

Application

  • Automotive Applications
  • Hybrid Electrical Vehides (H)EV
  • Motor Drives
  • Commercial Agriculture Vehicles
  • Main inverter

Parameters

Sixpack Long Tabs
HybridPACK™ Drive Automotive

IGBT Module FAQ

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  • How are IGBT modules used in industrial applications?

    IGBT modules are designed and manufactured with a wide range of blocking voltages, current capacities, circuit configuration sizes and isolation voltages. IGBT modules are designed to provide high reliability and are customized to meet the individual needs of end-use applications, including aerospace, automotive, medical, renewable energy and industrial traction markets.