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Introducing the 4.5 kV XHP 3 IGBT Module: Streamlining Drives with Optimal Efficiency

Update : December 18, 2023

The industry's transition towards outsourcing complexity to suppliers and embracing smaller IGBT modules is discernible across diverse applications. In response to the global trend towards downsizing and integration, Infineon Technologies presents the 4.5 kV XHP 3 IGBT modules, poised to revolutionize the landscape for medium voltage drives (MVD) and transportation applications operating at 2000 to 3300 V AC in 2- and 3-level topologies. Applications benefiting from these innovative devices include expansive conveyor belts, pumps, high-speed trains, locomotives, as well as commercial, construction, and agricultural vehicles (CAV).

IGBT module

The XHP family consists of a 450 A dual IGBT module with TRENCHSTOP IGBT4 and an emitter-controlled diode, along with a 450 A double diode module featuring an emitter-controlled E4 Diode. Both modules boast an enhanced isolation capability of 10.4 kV, facilitating simplified paralleling and downsizing without compromising efficiency. In contrast to the previous necessity for intricate busbars to parallelize switching modules, leading to intricate design endeavors and leakage inductance, the XHP family's innovative design streamlines paralleling by arranging connections conveniently side by side. Consequently, a singular straight busbar suffices for paralleling.

Moreover, the 4.5 kV XHP family empowers developers to reduce unit numbers. Traditional IGBT solutions involve multiple single switches and a double diode. The new devices, however, enable designs to condense to two dual switches and a more compact double diode, marking a significant advancement in integrated drives.

The combination of the XHP 3 FF450R45T3E4_B5 dual switch and the DD450S45T3E4_B5 double diode results in substantial cost savings and a reduced footprint. As an illustration, previous Infineon IGBT solutions necessitated four switches of either 140 x 190 mm² or 140 x 130 mm² and one double diode measuring 140 x 130 mm². With the advent of the new XHP family, these components can be streamlined to two dual switches of 140 x 100 mm² each and a more compact 140 x 100 mm² double diode.

Availability:

The IGBT modules FF450R45T3E4_B5 and DD450S45T3E4_B5 are currently available for procurement.


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Modern Insulated Gate Bipolar Transistors (IGBTs) are commonly utilized as voltage-controlled bipolar devices exhibiting metal-oxide-semiconductor (MOS) )-like input characteristics and bipolar output features. The advent of IGBTs has empowered electronics engineers to leverage the advantages of both Power MOS Field-Effect Transistors (MOSFETs) and small-signal Bipolar Transistors (BJTs) within a singular hardware unit, seamlessly amalgamating the functionalities of power MOSFETs and BJT components. This structural integration combines the straightforward gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capabilities of bipolar transistors.